High-performance CdS nanobelt field-effect transistors with high-κ HfO2 top-gate dielectrics
Year: 2009
Type: article
Source: Journal of Materials Chemistry
DOI: 10.1039/b822518d
Institution: Peking University
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2068917686
