Work

Numerical analysis of indirect Auger transitions in InGaN

Year: 2012

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.4733353

Authors: Francesco Bertazzi, Michele Goano, Enrico Bellotti

Institutions: Boston University, Politecnico di Torino, Institute of Electronics, Computer and Telecommunication Engineering

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2069748622

FWCI: 9.354

Cites: 44

Cited by: 79

Related to: 10