Gamma-ray sensor based on an iron chloride tetraphenyl porphyrin/p-silicon heterojunction diode
Year: 2012
Type: article
Abstract: An Au/Fe(III)ClTPP/p-Si/Al heterojunction diode was constructed. The I – V characteristics of the sensor under dark and illumination conditions were studied before and after γ -irradiation. C – V measurements were also carried out at 1 MHz before and after γ -irradiation. Two conduction mechanisms are operating in the device depending on the applied potential. Thermionic emission conduction is operating up to 0.6 V and space charge limited current conduction is operating at voltages >0.6 V. The rectification ratio, built-in potential and density of defect states in the interfacial layer increase with increasing the irradiation dose. Increasing the irradiation dose decreases the quality factor, the dark current, the capacitance at zero bias potential and the carrier density in the depletion region. These changes are attributed to an increase in the density of defect states in the interfacial layer and energy gap of a semiconductor upon γ -irradiation.
Source: Physica Scripta
Authors: H M Zeyada, M I El-Gammal, O A ElBatrawy, B M Omar
Institution: Damietta University
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2069809123