Work

Comparison of dry etch damage in GaAs/AlGaAs heterojunction bipolar transistors exposed to ECR and ICP Ar plasmas

Year: 1998

Type: article

Source: Solid-State Electronics

DOI: 10.1016/s0038-1101(97)00247-5

Authors: J.W Lee, C.R Abernathy, S.J Pearton, F Ren, C Constantine, C Barratt, R.J Shul

Institutions: University of Florida, Sandia National Laboratories

Language: English

Topic: Low-Pressure Plasma Processing and Diagnostics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2069934772

FWCI:

Cites: 16

Cited by: 9

Related to: 10