Work

10-nm silicon lines fabricated in (110) silicon

Year: 1995

Type: article

Source: Microelectronic Engineering

DOI: 10.1016/0167-9317(94)00058-3

Authors: H. Namatsu, M. Nagase, K. Kurihara, K. Iwadate, K. Murase

Institution: NTT (Japan)

Language: English

Topic: Advancements in Photolithography Techniques

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2070089925

FWCI: 2.778

Cites: 7

Cited by: 28

Related to: 10