Work

Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs

Year: 2003

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/s0022-0248(02)01846-8

Authors: M. Longo, R. Magnanini, A. Parisini, L. Tarricone, A. Carbognani, C. Bocchi, E. Gombia

Institutions: University of Parma, Institute of Materials for Electronics and Magnetism

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2070102012

FWCI: 1.117

Cites: 15

Cited by: 31

Related to: 10