Nanoscale strain analysis of strained-Si metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction
Year: 2006
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.2217136
Authors: H. H. Liu, X. F. Duan, X. Y. Qi, Q. X. Xu, H. O. Li, H. Qian
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2070313010