Work

Doping characteristics of undoped and Zn-doped in(Ga)AlAs layers grown by low-pressure metalorganic vapour phase epitaxy

Year: 1994

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/0022-0248(94)90135-x

Authors: F.W. Reier, E. Jahn, N. Agrawal, P. Harde, N. Grote

Institution: Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2071868601

FWCI: 1.565

Cites: 10

Cited by: 10

Related to: 10