Annealing properties of vacancy-type defects in ion-implanted GaN studied by monoenergetic positron beams
Year: 2007
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.2798586
Language: English
Subfield: Mechanics of Materials
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2073528512
