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Defect Production in Phosphorus Ion-Implanted SiO2(43 nm)/Si Studied by a Variable-Energy Positron Beam

Year: 1991

Type: article

Abstract: Vacancy-type defects in 150-keV P+-implanted SiO2 (43 nm)/Si(100) specimens were studied by a variable-energy positron beam. The results show that the damaged layer induced by P+-implantation extends far beyond the stopping range of phosphorus ions. From isochronal annealing experiments, it was found that oxygen atoms recoiled from the SiO2 layer into the Si substrate, forming stable oxygen-vacancy complexes in the substrate near the interface. The final recovery of vacancy-type defects was observed at 1200°C.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.30.201

Authors: Akira Uedono, Long Wei, Chisei Dosho, Hitoshi Kondo, Shoichiro Tanigawa, Jun Sugiura, Makoto Ogasawara

Institutions: University of Tsukuba, Hitachi (Japan)

Language: English

Topic: Muon and positron interactions and applications

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2073879620

FWCI: 2.296

Cites: 23

Cited by: 35

Related to: 10