Year: 2000
Type: article
Abstract: This work describes an approach for small signal modelling of GaAs-based heterojunction bipolar transistors (HBTs) for low-voltage/high-power application (i.e., Vce=3 V, Jc=3×104 A/cm2). The parameter extraction procedure is discussed in detail. Furthermore, it is demonstrated that the model is fully scalable with respect to emitter area by comparison of simulated and measured S-parameters in the frequency range from DC to 20 GHz. Based on the small signal model, a nonlinear large signal model with the same Π-type topology is proposed. It has a small number of parameters and considers self-heating, which is particularly important for HBTs. Parameter extraction is discussed and it is demonstrated by comparison of simulation and measurement that the model can accurately predict the DC characteristics of a HBT for ambient temperatures ranging from 20 to 100°C. ©2000 John Wiley & Sons, Inc. Int J RF and Microwave CAE 10: 33–42, 2000.
Institution: Infineon Technologies (Germany)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2073971902