Work

Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes

Year: 2011

Type: article

Abstract: We study the influence of pump current and absorber bias voltage on the pulse width and frequency of sustained pulsation in GaN-based multisection laser diodes. The observed frequencies and pulse widths range from 1.5 to 4.5 GHz and 90 to 18 ps, respectively. Negative absorber bias is found to reduce the pulsation frequency and increase the pulse width. This behavior is explained by the tuneability of absorption and charge carrier lifetime in the absorber via the applied bias voltage.

Source: Applied Physics Express

DOI: 10.1143/apex.4.062702

Authors: Wolfgang G. Scheibenzuber, Christian Hornuss, Ulrich T. Schwarz, Luca Sulmoni, Julien Dorsaz, Jean-François Carlin, Nicolas Grandjean

Institutions: Fraunhofer Institute for Applied Solid State Physics, University of Freiburg, École Polytechnique Fédérale de Lausanne

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2074068898

FWCI: 1.084

Cites: 11

Cited by: 15

Related to: 10