Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector
Year: 2012
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.4737648
Institution: Rutgers, The State University of New Jersey
Language: English
Topic: ZnO doping and properties
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2074534271
