Work

Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3

Year: 1996

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.363264

Authors: X. H. Wu, L. M. Brown, D. Kapolnek, S. Keller, B. Keller, S. P. DenBaars, J. S. Speck

Institution: University of California, Santa Barbara

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Division of Materials Research, Army Research Office

OpenAlex ID: W2075991069

FWCI: 18.2

Cites: 35

Cited by: 430

Related to: 10