Year: 1995
Type: article
Abstract: We found that B diffusion profiles in polysilicon can be regarded as having a constant surface concentration, . Using this finding, we derived a B diffusion profile model and identified the diffusion coefficient of B in polysilicon. We also derived the model for the critical time, , to flatten the B profile in a polysilicon gate. Using the critical time for B penetration through the gate oxide, , we determined the allowable diffusion time . We showed that B implantation provides a thermal budget wide enough to fabricate p + polysilicon gates for 0.1 μm complementary metal oxide semiconductor with pure .
DOI: 10.1149/1.2050093
Institution: Fujitsu (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2075999727