Work

An In-defect complex as a possible explanation for high luminous efficacy of InGaN and AlInN based devices

Year: 2010

Type: article

Source: Hyperfine Interactions

DOI: 10.1007/s10751-010-0200-9

Authors: P. Kessler, K. Lorenz, S. M. C. Miranda, J. G. Correia, K. Johnston, R. Vianden

Institutions: University of Bonn, Saarland University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2077536633

FWCI: 0.237

Cites: 9

Cited by: 8

Related to: 10