Work

Surface treatments toward obtaining clean GaN(0001) from commercial hydride vapor phase epitaxy and metal-organic chemical vapor deposition substrates in ultrahigh vacuum

Year: 2010

Type: article

Source: Applied Surface Science

DOI: 10.1016/j.apsusc.2010.03.001

Authors: Azusa N. Hattori, Katsuyoshi Endo, Ken Hattori, Hiroshi Daimon

Institutions: Research Center for Precision Engineering, The University of Osaka, Nara Institute of Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2078477261

FWCI: 1.427

Cites: 88

Cited by: 55

Related to: 10