Year: 2009
Type: article
Abstract: Highly textured FeSb2 films were produced on quartz wafers by a sputtering method. Their resistivity and Seebeck coefficient (S) were measured and a maximum absolute value of S∼160 μV K−1 at 50 K was obtained. Hall measurements were employed to study the charge carrier concentrations and Hall mobilities of the FeSb2 films. By comparing with the transport properties of FeSb2 single crystals and an extrinsically doped FeSb1.98Te0.02 single crystal, the thermoelectric properties of the FeSb2 films are demonstrated to be dominated by the intrinsic properties of FeSb2 at a high charge carrier concentration.
Source: Journal of Applied Physics
DOI: 10.1063/1.3155800
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2078620282