Work

A novel GAAC FinFET transistor: device analysis, 3D TCAD simulation, and fabrication

Year: 2009

Type: article

Source: Journal of Semiconductors

DOI: 10.1088/1674-4926/30/1/014001

Authors: Xiao Deyuan, Wang Xi, Yuan Haijiang, Yu Yuehui, Xie Zhifeng, Chi Minhwa

Institutions: Chinese Academy of Sciences, Semiconductor Manufacturing International (China), Shanghai Institute of Microsystem and Information Technology

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: University of Cambridge, Deutsche Forschungsgemeinschaft

OpenAlex ID: W2079790010

FWCI:

Cites: 12

Cited by: 3

Related to: 10