Work

Role of Alkaline-Earth Metal in Solution-Processed Indium Oxide Based Thin-Film Transistors

Year: 2012

Type: article

Abstract: We fabricated alkaline-earth metal doped indium oxide thin-film transistors (TFTs) using a solution process. To analyze the effects of Mg, Ca, and Sr on the solution-processed indium oxide TFTs, thermogravimetric analysis, X-ray diffraction, atomic force microscopy analysis, and X-ray photoelectron spectroscopy were performed. The main difference in electrical performance results from the dehydroxylation energy of alkaline-earth metal, each ion radius and optical band gap. The optimized Mg-, Ca-, and Sr-doped indium oxide TFTs show mobilities of 2.03, 1.64, and 1.08 cm 2 V -1 s -1 , respectively, and an on-off current ratio of about ∼10 5 .

Source: Applied Physics Express

DOI: 10.1143/apex.5.111101

Authors: Jee Ho Park, Young Bum Yoo, Keun Ho Lee, Woo Soon Jang, Jin Young Oh, Soo Sang Chae, Won Jin Choi, Hong Koo Baik

Institutions: Yonsei University, Korea Research Institute of Chemical Technology

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funders: National Research Foundation, National Research Foundation of Korea, LG Display

OpenAlex ID: W2080052041

FWCI: 0.8

Cites: 2

Cited by: 10

Related to: 10