Work

Ge CMOS: Breakthroughs of nFETs (Imax=714 mA/mm, gmax=590 mS/mm) by recessed channel and S/D

Year: 2014

Type: conference-paper

Source: Symposium on VLSI Technology

DOI: 10.1109/vlsit.2014.6894374

Authors: Heng Wu, Mengwei Si, Lin Dong, Jingyun Zhang, Peide D. Ye

Institution: Purdue University West Lafayette

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2080082005

FWCI: 3.212

Cites: 5

Cited by: 11

Related to: 10