Work

Barrier thickness dependence of photocurrent spectral intensity in GaAs/AlAs superlattice p-i-n diodes

Year: 1998

Type: article

Source: Microelectronic Engineering

DOI: 10.1016/s0167-9317(98)00156-7

Authors: K Kawasaki, K Kawashima, M Takeuchi, K Fujiwara

Institution: Kyushu Institute of Technology

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2081920457

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Cites: 11

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Related to: 10