Boron-Doped Peroxo-Zirconium Oxide Dielectric for High-Performance, Low-Temperature, Solution-Processed Indium Oxide Thin-Film Transistor
Year: 2013
Type: article
DOI: 10.1021/am402153g
Institution: Yonsei University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2082075720
