Work

Selective area epitaxy of GaSb and AlGaSb by metalorganic molecular beam epitaxy

Year: 1994

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/0022-0248(94)90419-7

Authors: X.F. Liu, H. Asahi, Y. Okuno, D. Marx, K. Inoue, S. Gonda

Institutions: The Institute of Scientific and Industrial Research, The University of Osaka, The University of Osaka

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Education, Culture, Sports, Science and Technology

OpenAlex ID: W2082531708

FWCI: 0.626

Cites: 21

Cited by: 7

Related to: 10