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Ordering effects in Raman spectra of coherently strained GaAs1−xNx

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Year: 1997
Type: article
Source: Physical review. B, Condensed matter
DOI: 10.1103/physrevb.56.15836
Authors: A. M. Mintairov, P. A. Blagnov, V. G. Melehin, N. N. Faleev, J. L. Merz, Y. Qiu, S. A. Nikishin, H. Temkin
Institutions: Ioffe Institute, University of Notre Dame, Texas Tech University
Language: Latvian

Topic: GaN-based semiconductor devices and materials
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences

Open Access status: closed

Funders: Texas Tech University, Ioffe Institute, Defense Advanced Research Projects Agency
OpenAlex ID: W2083758564
FWCI: 2.198
Cites: 26
Cited by: 87
Related to: 10
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