Effects of growth rate of a GaN buffer layer on the properties of GaN on a sapphire substrate
Year: 1999
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.370625
Institutions: Jeonbuk National University, Chiba University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2085635239