Doped GaN nanowires on diamond: Structural properties and charge carrier distribution
Year: 2015
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.4906747
Authors: Fabian Schuster, Andrea Winnerl, Saskia Weiszer, Martin Hetzl, Jose A. Garrido, Martin Stutzmann
Institution: Technical University of Munich
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Funder: Deutsche Forschungsgemeinschaft
OpenAlex ID: W2086772913