Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories
Year: 2013
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.4818499
Authors: L. M. Prócel, L. Trojman, J. Moreno, F. Crupi, V. Maccaronio, R. Degraeve, L. Goux, E. Simoen
Institutions: University of Calabria, Universidad San Francisco de Quito, IMEC
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: Universitat de Barcelona
OpenAlex ID: W2086857643