Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy
Year: 2001
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.1418455
Institution: Tampere University of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2087458121
