Work

Effect of Deposition Temperature on the Opto-Electronic Properties of Molecular Beam Epitaxy Grown InAs Quantum Dot Devices for Broadband Applications

Year: 2012

Type: article

Abstract: Effect of Deposition Temperature on the Opto-Electronic Properties of Molecular Beam Epitaxy Grown InAs Quantum Dot Devices for Broadband Applications, Majid, Mohammed A., Hugues, Maxime, Childs, David T. D., Hogg, Richard A.

Source: Japanese Journal of Applied Physics

DOI: 10.7567/jjap.51.02bg09

Authors: Mohammed A. Majid, Maxime Hugues, David T. D. Childs, Richard A. Hogg

Institution: University of Sheffield

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2088028992

FWCI: 0.911

Cites: 14

Cited by: 14

Related to: 10