Work

The effect of oxygen incorporation in sputtered scandium nitride films

Year: 2008

Type: article

Source: Thin Solid Films

DOI: 10.1016/j.tsf.2008.05.050

Authors: M.A. Moram, Z.H. Barber, C.J. Humphreys

Institution: University of Cambridge

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Engineering and Physical Sciences Research Council

Awards: Materials Challenges in GaN-based Light Emitting Structures, Defect reduction in GaN using the in-situ growth of transition metal nitride layers

OpenAlex ID: W2089010091

FWCI: 1.527

Cites: 27

Cited by: 93

Related to: 10