Work

Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy

Year: 2009

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.3160312

Authors: J. Hertkorn, S. B. Thapa, T. Wunderer, F. Scholz, Z. H. Wu, Q. Y. Wei, F. A. Ponce, M. A. Moram, C. J. Humphreys, C. Vierheilig, U. T. Schwarz

Institutions: Universität Ulm, University of Cambridge, Arizona State University, University of Regensburg

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Engineering and Physical Sciences Research Council

Awards: Science Bridge Award USA: Harnessing Materials for Energy, Materials Challenges in GaN-based Light Emitting Structures, Nitrides for the 21st century

OpenAlex ID: W2089562034

FWCI: 1.23

Cites: 18

Cited by: 20

Related to: 10