Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors
Year: 2008
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.3028340
Institutions: Yonsei University, Samsung (South Korea)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2090737533