Work

Transient simulation of AlGaN/GaN HEMT including trapping and thermal effects

Year: 2014

Type: conference-paper

Source: IEEE International Conference on Solid-State and Integrated Circuit Technology

DOI: 10.1109/icsict.2014.7021396

Authors: Xingye Zhou, Zhihong Feng, Yuangang Wang, Guodong Gu, Xubo Song, Shujun Cai

Institution: Hebei Semiconductor Research Institute

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2091306076

FWCI: 0.765

Cites: 12

Cited by: 9

Related to: 10