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Electrical-Pumped Active Plasmonic with InP-Based Quantum Wells

Year: 2011

Type: article

Abstract: The InP-based wafers with InGaAsP multiple Quantum Wells (QWs) were designed for the loss compensation of surface plasmon polaritons (SPPs). Electrical-pumped device was fabricated by conventional III-V processes and e-Beam lithography (EBL) technology. When forward voltage is added on the device, it is observed that the gain of the quantum wells at 1.55μm assist the propagation of SPPs.

Source: Advanced materials research

DOI: 10.4028/www.scientific.net/amr.415-417.537

Authors: Te Li, Er Juan Hao

Institutions: Changchun University of Science and Technology, Jilin University

Language: English

Topic: Plasmonic and Surface Plasmon Research

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W2091306547

FWCI:

Cites: 10

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Related to: 10