Work

Behavior of manganese impurities in Hg3In2Te6

Year: 1999

Type: article

Source: Semiconductors

DOI: 10.1134/1.1187905

Authors: O. G. Grushka, Z. M. Grushka, V. M. Frasunyak, V. S. Gerasimenko

Institution: Yuriy Fedkovych Chernivtsi National University

Language: English

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2091405367

FWCI:

Cites:

Cited by: 2

Related to: 10