Work

Silicon molecular beam epitaxy: Use of a microion source for doping by low-energy implantation

Year: 1987

Type: article

Source: Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

DOI: 10.1116/1.583941

Authors: R. P. de Carvalho, N. Djebbar, J. Gutierrez, A. Vapaille

Institution: Université Paris-Sud

Language: English

Topic: Ion-surface interactions and analysis

Subfield: Surfaces, Coatings and Films

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Institut National des Sciences Appliquées de Lyon

OpenAlex ID: W2091458596

FWCI: 1.038

Cites:

Cited by: 6

Related to: 10