Work

Channel Hot-Carrier Effect of 4H-SiC MOSFET

Year: 2009

Type: article

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.615-617.813

Authors: Liang Chun Yu, Kin P. Cheung, John S. Suehle, Jason P. Campbell, Kuang Sheng, Aivars J. Lelis, Sei Hyung Ryu

Institutions: National Institute of Standards and Technology, Rutgers, The State University of New Jersey, DEVCOM Army Research Laboratory, United States Army, Wolfspeed, Inc. (United States)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Institute of Standards and Technology

OpenAlex ID: W2091488694

FWCI: 0.773

Cites:

Cited by: 13

Related to: 10