Work

Evaluation of the hydrostatic pressure effect on Mn/p-Si Schottky barrier diode electrical parameters and interface states

Year: 2012

Type: article

Source: Materials Science in Semiconductor Processing

DOI: 10.1016/j.mssp.2012.03.004

Authors: Songül Fiat, Güven Çankaya

Institutions: Tokat Gaziosmanpaşa Üniversitesi, Ankara Yıldırım Beyazıt University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2091508989

FWCI: 0.497

Cites: 52

Cited by: 9

Related to: 10