Work

Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy

Year: 1998

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.368562

Authors: G. Pozina, I. Ivanov, B. Monemar, J. V. Thordson, T. G. Andersson

Institutions: Linköping University, Chalmers University of Technology, University of Gothenburg

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2092811488

FWCI: 6.124

Cites: 19

Cited by: 84

Related to: 10