Work

0.10 μm TiSi2 technology utilizing nitrogen diffusion controlled RTA

Year: 1995

Type: article

Source: Thin Solid Films

DOI: 10.1016/0040-6090(95)06838-4

Authors: Y. Matsubara, T. Sakai, T. Ishigami, K. Ando, T. Horiuchi

Institution: NEC (Japan)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2093115482

FWCI: 0.925

Cites: 10

Cited by: 4

Related to: 10