Work

Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN

Year: 2002

Type: article

Abstract: The Ga surface coverage during the growth of GaN by plasma-assisted molecular-beam epitaxy (PAMBE) has been systematically studied by reflection high-energy electron diffraction as a function of the Ga flux and the substrate temperature. As a consequence, a diagram is depicted, which describes the Ga surface coverage during PAMBE as function of growth conditions. In particular, we show that a region exists in this diagram, in which the Ga surface coverage is independent of fluctuations in the Ga flux or the substrate temperature and which forms a “growth window” for GaN growth. The influence of the Ga surface coverage on the GaN surface morphology and the growth kinetics is discussed.

Source: Journal of Applied Physics

DOI: 10.1063/1.1471923

Authors: C. Adelmann, J. Brault, D. Jalabert, P. Gentile, H. Mariette, Guido Mula, B. Daudin

Institutions: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, University of Cagliari

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2093258331

FWCI: 8.798

Cites: 19

Cited by: 188

Related to: 10