Work

Effect of AlGaN Barrier Thickness on the Transconductance of AlGaN/GaN High Electron Mobility Transistors

Year: 2014

Type: conference-paper

Source: ECS Transactions

DOI: 10.1149/06001.0057ecst

Author: Rajab Yahyazadeh

Institution: Islamic Azad University, Tehran

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2094961998

FWCI:

Cites:

Cited by: 1

Related to: 10