Work

Infrared absorption in silicon at elevated temperatures

Year: 1996

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.117161

Authors: H. Rogne, P. J. Timans, H. Ahmed

Institution: University of Cambridge

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2095412129

FWCI: 1.195

Cites: 1

Cited by: 49

Related to: 10