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Acceptors in n-Type Silicon Crystals Induced by Plastic Deformation

Year: 1980

Type: article

Abstract: The carrier concentration and the Hall mobility in plastically deformed n-type silicon crystals are measured as a function of the temperature and the density of dislocations introduced. The results show that the deformation-induced defects act as acceptors. The acceptor level is found to be located between 0.34 eV and 0.42 eV above the valence band, being higher for higher densities of dislocations introduced.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.19.l629

Authors: Haruhiko Ono, Koji Sumino

Institution: Tohoku University

Language: English

Topic: Silicon and Solar Cell Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2095437286

FWCI: 2.788

Cites: 2

Cited by: 23

Related to: 10