Work

Non‐Volatile Photochemical Gating of an Epitaxial Graphene/Polymer Heterostructure

Year: 2011

Type: article

Abstract: A novel heterostructure based on epitaxial graphene grown on silicon carbide combined with two polymers is demonstrated, with a neutral spacer and a photoactive layer that provides potent electron acceptors under UV light exposure. UV exposure of this heterostructure enables control of the electrical parameters of graphene in a non-invasive, non-volatile, and reversible way.

Source: Advanced Materials

DOI: 10.1002/adma.201003993

Authors: Samuel Lara‐Avila, Kasper Moth‐Poulsen, Rositza Yakimova, Thomas Bjørnholm, Vladimir Fal’ko, Alexander Tzalenchuk, Sergey Kubatkin

Institutions: Chalmers University of Technology, University of California, Berkeley, Linköping University, University of Copenhagen, Lancaster University, National Physical Laboratory

Language: English

Topic: Graphene research and applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funder: Engineering and Physical Sciences Research Council

Awards: Pathways to Impact Awards : Lancaster University, Maximising the Impact of Graphene Research on Innovation through Materials Science, Chemistry and Engineering, G5355162491

OpenAlex ID: W2095809347

FWCI: 8.548

Cites: 24

Cited by: 144

Related to: 10