Work

Low- and high-field electron-transport parameters for unstrained and strained Si/sub 1-x/Ge/sub x/

Year: 1997

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/55.585350

Authors: F.M. Bufler, P. Graf, B. Meinerzhagen, B. Adeline, M.M. Rieger, H. Kibbel, G. Fischer

Institutions: University of Bremen, University of Cambridge, Daimler (Germany), Goethe University Frankfurt

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2102166336

FWCI: 4.273

Cites: 15

Cited by: 53

Related to: 10