Work

Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

Year: 2009

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2009.2034670

Authors: H.Y. Lee, Y.S. Chen, P.S. Chen, T.Y. Wu, F. Chen, C.C. Wang, P.J. Tzeng, M.-J. Tsai, C. Lien

Institutions: National Tsing Hua University, Industrial Technology Research Institute, Minghsin University of Science and Technology

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2102900407

FWCI: 12.37

Cites: 13

Cited by: 201

Related to: 10