Work

Ultra-low voltage circuits and processor in 180nm to 90nm technologies with a swapped-body biasing technique

Year: 2004

Type: conference-paper

Abstract: A low-voltage swapped-body biasing technique where PMOS bodies are connected to ground and NMOS bodies to Vcc is evaluated. Available measurements show more than 2.6x frequency improvement at 0.5V Vcc and the ability to reduce Vcc by 0.2V for the same frequency compared to no body bias in 180 to 90nm CMOS technologies.

Source: Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference

DOI: 10.1109/isscc.2004.1332641

Authors: S. Narendra, J. Tschanz, J. Hofsheier, B. Bloechel, S. Vangal, Y. Hoskote, S. Tang, D. Somasekhar, A. Keshavarzi, V. Erraguntla, G. Dermer, N. Borkar, S. Borkar, V. De

Institution: Intel (United States)

Language: English

Topic: Low-power high-performance VLSI design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W2106550461

FWCI: 9.134

Cites: 5

Cited by: 85

Related to: 10