Work

High intensity red emission from Eu doped GaN powders

Year: 2008

Type: article

Source: Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

DOI: 10.1002/pssc.200778413

Authors: Junxia Shi, M. V. S. Chandrashekhar, Jesse Reiherzer, William Schaff, Jie Lu, Francis Disalvo, Michael Spencer

Institution: Cornell University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2108033713

FWCI: 1.585

Cites: 18

Cited by: 10

Related to: 10